Molybdenum Trioxide CAS 1313-27-5

Molybdenum dioxide sputtered film. First, molybdenum dioxide powder containing MoO290%~99.5% is isostatically pressed into a pole plate at 7~28MPa, and then sintered in a vacuum furnace at 1250 ℃ for 6h to form a molybdenum dioxide target blank, and then magnetron sputtering or Pulsed laser sputtering or ion beam sputtering sputters molybdenum dioxide onto substrates, which can be plastic materials, broken glass substrates, ceramic substrates and hybrid materials. The plastic substrate is polynorbornene, and the ceramic substrate is sapphire (Al2O3). Molybdenum dioxide is deposited on the substrate to form a thin film of molybdenum dioxide with a thickness of 0.5 to 10 μm, and then the work function of molybdenum dioxide is measured. Generally, the work function of light-emitting diode materials such as indium-tin oxide (ITO) is required. A typical value is 4.7eV.

The work function of the molybdenum dioxide sputtered film is determined to be 4.7-6 eV, which is higher than that of the indium-tin oxide film. In addition, the surface roughness of molybdenum dioxide film is lower than that of indium-tin oxide, and its roughness is less than 5nm. At wavelengths of 350-800 nm, the transmittance of the molybdenum dioxide film is greater than 85%. The resistivity is less than 300μΨcm. The research results show that molybdenum dioxide film has excellent electrical properties, optical properties and physical surface smoothness, and can be widely used in light emitting diodes (OLEDs), liquid crystal display devices (LCDs), plasma display panels (PDPs), field radiation Display panels (FED), thin film solar cells, low resistance ohmic contact materials and other electronic and semiconductor materials. It should be said that the research on molybdenum dioxide film is currently in its infancy, and the research will become more extensive and in-depth.